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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB760 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SD855 APPLICATIONS *Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE -60 -60 -5 -1 -2 30 UNIT V .cn mi e V V IC Collector Current-Continuous A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature A PC W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB760 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V -1.3 V ICEO Collector Cutoff Current VCE= -60V; IB= 0 B -300 A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-1 Classifications R 40-90 Q 70-150 ww w P 120-250 scs .i IC= -0.2A; VCE= -4V IC= -1A; VCE= -4V .cn mi e 40 15 -1 mA 250 isc Websitewww.iscsemi.cn 2 |
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